6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

A structural characterisation by high energy x-ray diffraction of [015] and [001] grown 6H-SiC crystals is presented. The [015]-grown crystal shows an improved crystal quality, concerning the curvature of lattice planes and the micro domain structure. We relate this to the lowered level of rotational symmetry for the [015]-growth which reduces the number of active slip systems during the growth process.