Study of Ru barrier failure in the Cu/Ru/Si system

The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission el...

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Veröffentlicht in:	Journal of materials research 2007-09, Vol.22 (9), p.2505-2511
Hauptverfasser:	Damayanti, M., Sritharan, T., Mhaisalkar, S.G., Phoon, E., Chan, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diffusion
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.
ISSN:	0884-2914 2044-5326
DOI:	10.1557/jmr.2007.0310