S and Te inter-diffusion in CdTe/CdS hetero junction
Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diff...
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| Veröffentlicht in: | Solar energy materials and solar cells 2007-09, Vol.91 (15), p.1392-1397 |
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| container_title | Solar energy materials and solar cells |
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| creator | Enríquez, J. Pantoja Gómez Barojas, E. Silva González, R. Pal, U. |
| description | Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of
CdTe
1
-
x
S
x
ternary compound at the CdTe–CdS interface. |
| doi_str_mv | 10.1016/j.solmat.2007.05.008 |
| format | Article |
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1
-
x
S
x
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CdTe
1
-
x
S
x
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| ispartof | Solar energy materials and solar cells, 2007-09, Vol.91 (15), p.1392-1397 |
| issn | 0927-0248 1879-3398 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | AES Applied sciences CdS CdTe CdTe/CdS Energy Equipments, installations and applications Exact sciences and technology Inter-diffusion Natural energy Photovoltaic conversion Solar energy |
| title | S and Te inter-diffusion in CdTe/CdS hetero junction |
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