S and Te inter-diffusion in CdTe/CdS hetero junction

S and Te inter-diffusion in CdTe/CdS hetero junction

Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diff...

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Veröffentlicht in:Solar energy materials and solar cells 2007-09, Vol.91 (15), p.1392-1397
Hauptverfasser: Enríquez, J. Pantoja, Gómez Barojas, E., Silva González, R., Pal, U.
Format: Artikel
Sprache:eng
Schlagworte:
AES
Applied sciences
CdS
CdTe
CdTe/CdS
Energy
Equipments, installations and applications
Exact sciences and technology
Inter-diffusion
Natural energy
Photovoltaic conversion
Solar energy
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Beschreibung
Zusammenfassung:Effects of post formation thermal annealing of the CdTe–CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe 1 - x S x ternary compound at the CdTe–CdS interface.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2007.05.008