Studies on the gain characteristic of the AlInGaAs/AlGaAs strain quantum well

Using the Shu Lien Chuang method, the change of heavy and light hole energy caused by the strain calculated in the AlInGaAs/AlGaAs strain was quantum well. According to the Harrison model, the energy level distribution of the hole and electron in the strain AlIn-GaAs/AlGaAs quantum well and GaAs/AlGaAs unstrain quantum well were calculated and discussed. Further, through calculating and comparing the different quantum wells linear gain, we obtained that the AlInGaAs/AlGaAs stain quantum well has the better optical gain characteristic than the GaAs/AlGaAs unstrain quantum well. So the AlInGaAs/AlGaAs stain quantum well semiconductor material was used to fabricate semiconductor laser with the advantage over the traditional GaAs/AlGaAs material.