Thermoelectric properties of vapor-grown polycrystalline cubic SiC

Thermoelectric properties of vapor-grown polycrystalline cubic SiC

Polycrystalline cubic silicon carbide layers, undoped and codoped with nitrogen and boron, have been grown via thermal decomposition of methyltrichlorosilane vapor in hydrogen, and their transport properties (electrical conductivity, thermoelectric power, and thermal conductivity) have been studied...

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Veröffentlicht in:Inorganic materials 2006-11, Vol.42 (11), p.1205-1209
Hauptverfasser: Ivanova, L. M., Aleksandrov, P. A., Demakov, K. D.
Format: Artikel
Sprache:eng
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Zusammenfassung:Polycrystalline cubic silicon carbide layers, undoped and codoped with nitrogen and boron, have been grown via thermal decomposition of methyltrichlorosilane vapor in hydrogen, and their transport properties (electrical conductivity, thermoelectric power, and thermal conductivity) have been studied in the temperature range 80-1100 K.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168506110069