Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminesc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica Status Solidi (b) 2007-06, Vol.244 (6), p.1797-1801
Hauptverfasser:	Keller, S., Fichtenbaum, N. A., Schaake, C., Neufeld, C. J., David, A., Matioli, E., Wu, Y., DenBaars, S. P., Speck, J. S., Weisbuch, C., Mishra, U. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	78.55.Cr 78.67.−n 81.16.Rf 81.40.Tv 81.65.Cf Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH3/N2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular‐resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200674752