Application of microsize light-emitting diode structure for monolithic optoelectronic integrated circuits

A Si/III–V–N alloys/Si structure was grown on a Si substrate by solid‐source molecular beam epitaxy (SSMBE) with an rf plasma nitrogen source and electron‐beam (EB) evaporator. A two‐dimensional (2D) growth mode was maintained during the growth of all layers. High‐resolution X‐ray diffraction (HRXRD) revealed that the structure had a small lattice mismatch to the Si substrate. InGaPN/GaPN double‐heterostructure (DH) light‐emitting diodes (LEDs) were fabricated on Si/III–V–N alloys/Si structure. The various sized LEDs were fabricated to put into the MOSFET for monolithic optoelectronic integrated circuits (OEIC). The luminescence properties of LEDs were evaluated by electroluminescence (EL). A double emission peak from all LED samples was observed at about 642 nm and 695 nm at room temperature (RT). As injection current increased, the emission peak wavelength changed from the peak wavelength of the InGaPN layer to that of the GaPN layer, likely due to carrier overflow of the active layer. A simplified fabrication process for the microsize LED of the unit circuit was proposed. The LEDs with emission areas from 5 × 5 μm2 to 20 × 20 μm2 were fabricated. The LED with an emission area of 5 × 5 μm2 can be applied to an optical device of a monolithic OEIC. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)