Current flow mechanisms in p-i-n structures based on cadmium telluride
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark curre...
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| Veröffentlicht in: | Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2002-03, Vol.5 (1), p.46-50 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined. |
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| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo5.01.046 |