THE SEEBECK COEFFICIENT OF TiO2 THIN FILMS

Undoped and doped TiO2 thin films were deposited onto glass substrates, by r.f. sputtering technique, at different substrate temperatures. The films were heat treated in order to stabilize the structure of the samples and to decrease the structural defects. The dependence of the Seebeck coefficient, a, versus inverse temperature, has been studied in the range 300 K-425 K. From the slope of the linear decrease of these dependences, Fermi energies have been obtained. The values of parameter r, which depend on the nature of the scattering mechanism of the current carriers, have been also determined.