Time-dependent numerical simulation of the VGF process with a rotating magnetic field

The influence of a rotating magnetic field (RMF) on the vertical gradient freeze (VGF) growth of Ga-doped Ge is studied numerically using the program CrysVun ++. On the basis of a global, time-dependent simulation of the VGF process including the melt flow a simple approach to estimate the solute se...

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Veröffentlicht in:	Journal of crystal growth 2007-05, Vol.303 (1), p.250-252
Hauptverfasser:	Bellmann, M.P., Pätzold, O., Wunderwald, U., Stelter, M., Möller, H.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Computer simulations A1. Rotating magnetic field A1. Segregation A2. Vertical gradient freeze B2. Semiconducting germanium Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Beschreibung
Zusammenfassung:	The influence of a rotating magnetic field (RMF) on the vertical gradient freeze (VGF) growth of Ga-doped Ge is studied numerically using the program CrysVun ++. On the basis of a global, time-dependent simulation of the VGF process including the melt flow a simple approach to estimate the solute segregation is presented. It is shown that the radial as well as the axial segregation can be improved by applying a RMF.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.11.131