Oxygen-isotope-doped silicon crystals grown by a floating zone method

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crysta...

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Veröffentlicht in:	Journal of crystal growth 2007-06, Vol.304 (2), p.310-312
Hauptverfasser:	Kakimoto, Koichi, Tanahashi, Katsuto, Yamada-Kaneta, Hiroshi, Nagasawa, Tohru
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Floating zone A2. Single crystal growth B1. Isotope oxygen B2. Semiconductor silicon Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics
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