Oxygen-isotope-doped silicon crystals grown by a floating zone method

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crysta...

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Veröffentlicht in:	Journal of crystal growth 2007-06, Vol.304 (2), p.310-312
Hauptverfasser:	Kakimoto, Koichi, Tanahashi, Katsuto, Yamada-Kaneta, Hiroshi, Nagasawa, Tohru
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Floating zone A2. Single crystal growth B1. Isotope oxygen B2. Semiconductor silicon Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics
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Zusammenfassung:	We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid–gas interface.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2007.03.015