Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band hgcdte detectors
For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems' architecture for integrated, dual-band detectors uses the sequential mode of the n-p^sup +^-n configuration. There is a single indium bump per pixel, leaving the p^sup +^ layer floating, and the operating polarit...
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Veröffentlicht in: | Journal of electronic materials 2004-06, Vol.33 (6), p.517-525 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems' architecture for integrated, dual-band detectors uses the sequential mode of the n-p^sup +^-n configuration. There is a single indium bump per pixel, leaving the p^sup +^ layer floating, and the operating polarity of the bias selects the spectral sensitivity by reverse-biasing the active p-n junction. Photogenerated minority carriers in the absorber layer of the forward-biased inactive photodiode are lost through recombination. This paper is the first report of a new optical crosstalk mechanism that occurs in sequential-mode, dual-band detectors. In the long-wavelength mode under out-of-band, short-wavelength illumination, radiative recombination yields emission near the bandgap energy of the short-wavelength absorber layer, resulting in a spurious short-wavelength response that appears as spectral crosstalk. We present experimental and device modeling results on the spectral crosstalk in molecular-beam-epitaxy-grown HgCdTe arrays with the cutoff wavelength of both bands in the 4-5-µm range. [PUBLICATION ABSTRACT] Key words: HgCdTe, infrared detector, two-color detector, crosstalk, radiative recombination |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-004-0040-y |