The effects of hydrogen on aluminum-induced crystallization of sputtered hydrogenated amorphous silicon

The effects of hydrogen on aluminum-induced crystallization (AIC) of sputtered hydrogenated amorphous silicon (a-Si:H) were investigated by controlling the hydrogen content of a-SiH films. Nonhydrogenated (a-Si) and hydrogenated (a-Si:H) samples were deposited by sputtering and plasma-enhanced chemi...

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Veröffentlicht in:	Journal of electronic materials 2006, Vol.35 (1), p.113-117
Hauptverfasser:	HOSSAIN, Maruf, ABU-SAFE, Husam H, NASEEM, Hameed, BROWN, William D
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Cross-disciplinary physics: materials science rheology Crystallization Deposition by sputtering Effects Exact sciences and technology Fourier transforms Hydrogen Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Silicon Thin films
Online-Zugang:	Volltext
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