Arsenic-doped mid-wavelength infrared HgCdTe photodiodes

The recently developed Te-rich, liquid-phase-epitaxy growth technology for low arsenic-doped mid-wavelength infrared (MWIR) HgCdTe with p-type doping concentrations

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2004-06, Vol.33 (6), p.590-595
Hauptverfasser:	KINCH, M. A, CHANDRA, D, SCHAAKE, H. F, SHIH, H.-D, AQARIDEN, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Arsenic Cross-disciplinary physics: materials science rheology Diodes Electronics Exact sciences and technology Growth from solutions Indium Materials science Mercury cadmium telluride Methods of crystal growth physics of crystal growth Optoelectronic devices Photodiodes phototransistors photoresistors Physics Semiconductor doping Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	The recently developed Te-rich, liquid-phase-epitaxy growth technology for low arsenic-doped mid-wavelength infrared (MWIR) HgCdTe with p-type doping concentrations
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-004-0051-8