Synthesis of carbon nitride thin films on Si(100) surface by using penning-type discharge sputtering technique

Carbon nitride thin films (CN x ) were successfully synthesized on Si(100) substrate by a using penning-type discharge sputtering technique. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). The bonding structures in the membrane were characterized by both X-ray...

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Veröffentlicht in:	Surface & coatings technology 2007-04, Vol.201 (15), p.6539-6541
Hauptverfasser:	Li, H.Y., Shi, Y.C., Feng, X.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bond structure Carbon nitride Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Other topics in materials science Penning-type discharge Physics Production techniques Surface treatment
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Beschreibung
Zusammenfassung:	Carbon nitride thin films (CN x ) were successfully synthesized on Si(100) substrate by a using penning-type discharge sputtering technique. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). The bonding structures in the membrane were characterized by both X-ray photoelectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy.
ISSN:	0257-8972 1879-3347
DOI:	10.1016/j.surfcoat.2006.09.070