Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties

We investigated the effects of post-growth annealing on structural and optical properties of self-assembled ring-shaped GaAs quantum dots (QDs) by photoluminescence (PL) measurements and cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Marginal st...

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Veröffentlicht in:	Journal of crystal growth 2007-04, Vol.301, p.740-743
Hauptverfasser:	Mano, T., Kuroda, T., Mitsuishi, K., Yamagiwa, M., Guo, X.-J., Furuya, K., Sakoda, K., Koguchi, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Low-dimensional structure A3. Molecular-beam epitaxy B2. Semiconductor III–V materials B3. Laser diodes Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optics Physics Self-assembly Semiconductor lasers laser diodes Theory and models of film growth
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Zusammenfassung:	We investigated the effects of post-growth annealing on structural and optical properties of self-assembled ring-shaped GaAs quantum dots (QDs) by photoluminescence (PL) measurements and cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Marginal structural changes of the QDs were observed after the annealing process up to 800 °C while the intensity of PL emission increased drastically. The annealed laser structure with three layers of the ring-shaped QDs showed photo-pumped laser action with clear threshold at 77 K.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.11.216