Spin-dependent Transverse Magnetic Focusing in InSb- and InAs-based Heterostructures

Spin-dependent ballistic transport was observed in InSb/AlInSb and InAs/AlGaSb heterostructures. Split transverse magnetic focusing maxima in InSb are consistent with spin-split trajectories of carriers as well as spin-flipping events occurring when carriers reflect off a lithographic barrier. Similar results are observed in InAs. The temperature dependence reveals that the ballistic focusing maxima survive up to ~150 K for InSb and ~60 K for InAs, whereas the splitting in the maxima disappears at lower temperatures, indicating the latter's separate origin.