Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature

The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800 Torr and under 250 °C. A film resistivity of 3 × 10 - 2 Ω cm and a transparency of 95% from 375 to 2500 nm was obtained for deposition at 20-mTorr diethylzinc, 1.0 Torr CO 2 , 799 Torr He, a TMAl/DEZn ratio of 1:100, 41 W / cm 3 RF power, and 225 °C. The average aluminum concentration in the ZnO film was 5.4 × 10 20 cm - 3 . It was found that, while the growth rate did not change with substrate temperature, both the resistivity and optical absorption coefficient declined with increasing temperature.