New Analysis on the Interface Trap States at Schottky Contact

New Analysis on the Interface Trap States at Schottky Contact

We present a simple equivalent circuit model that represents the charging dynamics of the interface states of Schottky diodes in the reverse bias condition. The interface trap states of an erbium-silicided Schottky diode are investigated from AC admittance measurement. The trap densities and the cap...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jun, Myungsim, Jang, Moongyu, Kim, Yarkyeon, Choi, Cheljong, Kim, Taeyoub, Park, Byungchul, Lee, Seongjae
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present a simple equivalent circuit model that represents the charging dynamics of the interface states of Schottky diodes in the reverse bias condition. The interface trap states of an erbium-silicided Schottky diode are investigated from AC admittance measurement. The trap densities and the capture and emission transition times are extracted by using the equivalent circuit model..
ISSN:0094-243X
DOI:10.1063/1.2729800