Study of silicide contacts to SiGe source/drain

Study of silicide contacts to SiGe source/drain

NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and SEM (scanning electron microscopy) inspection. From...

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Veröffentlicht in:Microelectronic engineering 2006-11, Vol.83 (11), p.2268-2271
Hauptverfasser: Lauwers, A., van Dal, M.J.H., Verheyen, P., Chamirian, O., Demeurisse, C., Mertens, S., Vrancken, C., Verheyden, K., Funk, K., Kittl, J.A.
Format: Artikel
Sprache:eng
Schlagworte:
Ni-silicide
NiPt-alloy
SiGe
Thermal stability
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Zusammenfassung:NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and SEM (scanning electron microscopy) inspection. From isochronal and isothermal anneals it is found that NiPt- and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. NiPt-germanosilicide degrades morphologically, while still in the monogermanosilicide phase.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2006.10.017