Annealing effects of a high-quality ZnTe substrate
The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly obs...
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Veröffentlicht in: | Journal of electronic materials 2004-06, Vol.33 (6), p.579-582 |
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creator | YOSHINO, Kenji YONETA, Minoru OHMORI, Kenzo SAITO, Hiroshi OHISHI, Masakazu YABE, Takayuki |
description | The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures. [PUBLICATION ABSTRACT] Key words: ZnTe, substrates, annealing |
doi_str_mv | 10.1007/s11664-004-0049-2 |
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Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures. [PUBLICATION ABSTRACT] Key words: ZnTe, substrates, annealing</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-004-0049-2</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Annealing ; Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; II-VI semiconductors ; Luminescence ; Materials science ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; Spectrum analysis ; Substrates ; Treatment of materials and its effects on microstructure and properties ; Zinc telluride</subject><ispartof>Journal of electronic materials, 2004-06, Vol.33 (6), p.579-582</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jun 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-9c3514ad7120bc0dd988d239925f1b4773757dd8a05e2e666d39558d561f94923</citedby><cites>FETCH-LOGICAL-c331t-9c3514ad7120bc0dd988d239925f1b4773757dd8a05e2e666d39558d561f94923</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15862309$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YOSHINO, Kenji</creatorcontrib><creatorcontrib>YONETA, Minoru</creatorcontrib><creatorcontrib>OHMORI, Kenzo</creatorcontrib><creatorcontrib>SAITO, Hiroshi</creatorcontrib><creatorcontrib>OHISHI, Masakazu</creatorcontrib><creatorcontrib>YABE, Takayuki</creatorcontrib><title>Annealing effects of a high-quality ZnTe substrate</title><title>Journal of electronic materials</title><description>The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures. [PUBLICATION ABSTRACT] Key words: ZnTe, substrates, annealing</description><subject>Annealing</subject><subject>Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>II-VI semiconductors</subject><subject>Luminescence</subject><subject>Materials science</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Treatment of materials and its 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Takayuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing effects of a high-quality ZnTe substrate</atitle><jtitle>Journal of electronic materials</jtitle><date>2004-06-01</date><risdate>2004</risdate><volume>33</volume><issue>6</issue><spage>579</spage><epage>582</epage><pages>579-582</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures. [PUBLICATION ABSTRACT] Key words: ZnTe, substrates, annealing</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-004-0049-2</doi><tpages>4</tpages></addata></record> |
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subjects | Annealing Cold working, work hardening annealing, post-deformation annealing, quenching, tempering recovery, and crystallization Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology II-VI semiconductors Luminescence Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Spectrum analysis Substrates Treatment of materials and its effects on microstructure and properties Zinc telluride |
title | Annealing effects of a high-quality ZnTe substrate |
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