Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly obs...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2004-06, Vol.33 (6), p.579-582
Hauptverfasser:	YOSHINO, Kenji, YONETA, Minoru, OHMORI, Kenzo, SAITO, Hiroshi, OHISHI, Masakazu, YABE, Takayuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Cold working, work hardening annealing, post-deformation annealing, quenching, tempering recovery, and crystallization Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology II-VI semiconductors Luminescence Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Spectrum analysis Substrates Treatment of materials and its effects on microstructure and properties Zinc telluride
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^sup L^ and EX^sup U^) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures. [PUBLICATION ABSTRACT] Key words: ZnTe, substrates, annealing
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-004-0049-2