Anomalous electrical properties of dislocation slip plane in Si

Anomalous electrical properties of dislocation slip plane in Si

The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving d...

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Veröffentlicht in:European physical journal. Applied physics 2004-07, Vol.27 (1-3), p.349-351
Hauptverfasser: Eremenko, V. G., Yakimov, E. B.
Format: Artikel
Sprache:eng
Schlagworte:
61.72.Ff
61.72.Lk
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Zusammenfassung:The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving dislocations and thus, the slip plane acts as extended barrier separating excess carriers.
ISSN:1286-0042
1286-0050
DOI:10.1051/epjap:2004149