Selective deposition of CVD iron on silicon dioxide and tungsten
The preferential deposition of CVD iron on silicon dioxide (SiO 2) surfaces over tungsten (W) surfaces has been demonstrated. Depositions carried out on patterned W/SiO 2 substrates have shown that layers up to a thickness of 180 nm with a resistivity value of 19 μΩ cm can be successfully deposited,...
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Veröffentlicht in: | Microelectronic engineering 2006-11, Vol.83 (11), p.2229-2233 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The preferential deposition of CVD iron on silicon dioxide (SiO
2) surfaces over tungsten (W) surfaces has been demonstrated. Depositions carried out on patterned W/SiO
2 substrates have shown that layers up to a thickness of 180
nm with a resistivity value of 19
μΩ
cm can be successfully deposited, exhibiting 100% selectivity; i.e. 180
nm of iron was deposited on the oxide surface whilst no deposition occurs on the tungsten surface. For longer deposition times, some iron nucleation was observed on the tungsten surface. It was found that the thickness of the deposited iron layer was inversely proportional to the exposed silicon dioxide surface area. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2006.10.008 |