A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

A SiGe-buffer structure for growth of high-quality GaAs layers on a Si (100) substrate is proposed. For the growth of this SiGe-buffer structure, a 0.80-µm Si^sub 0.1^ Ge^sub 0.9^ layer was first grown. Because of the large mismatch between this layer and the Si substrate, many dislocations formed near the interface and in the low part of the Si^sub 0.1^Ge^sub 0.9^ layer. A 0.80µm Si^sub 0.05^Ge^sub 0.95^ layer and a 1-µ top Ge layer were subsequently grown. The strained Si^sub 0.05^Ge^sub 0.95^/Si^sub 0.1^Ge^sub 0.9^ and Ge/Si^sub 0.05^Ge^sub 0.95^ interfaces formed can bend and terminate the upward-propagated dislocations very effectively. An in-situ annealing process is also performed for each individual layer. Finally, a 1-3-µm GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) at 600°C. The experimental results show that the dislocation density in the top Ge and GaAs layers can be greatly reduced, and the surface was kept very smooth after growth, while the total thickness of the structure was only 5.1 µm (2.6-µm SiGe-buffer structure + 2.5-µ GaAs layer). [PUBLICATION ABSTRACT] Key words: SiGe, GaAs on Si, heterostructure, dislocation, ultrahigh-vacuum chemical vapor deposition (UHV/CVD), metal-organic chemical vapor deposition (MOCVD)