In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction

We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1X1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with pe...

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Veröffentlicht in:Microelectronic engineering 2007-09, Vol.84 (9-10), p.2142-2145
Hauptverfasser: Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.
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Sprache:eng
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Zusammenfassung:We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1X1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer.
ISSN:0167-9317
DOI:10.1016/j.mee.2007.04.056