On the hot and cold autosolitons in dissipative semiconductor structures

It is experimentally shown that in bulk InSb and Te single crystals, during the formation and excitation of the dissipative structure in the non-equilibrium electron-hole plasma, in the case of a presence of longitudinal autosolitons, the carrier concentration decreases outside the autosolitons, while it increases in the case of transverse autosolitons. The longitudinal autosolitons, forming in the non-equilibrium electron-hole plasma by Joule heating, are considered to be cold, and the transverse autosolitons to be hot.