Mapping charge carrier distributions with THz microscopy

We report on THz microscopy for sensing charge carrier distributions in semiconductors. The contactless technique gives insight into the Drude response of electrons with a bandwidth of about 2.5 THz. We have achieved a spatial resolution of about 1.8 mum, which corresponds to a sensitivity sufficien...

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Hauptverfasser: Buersgens, F, Chen, H-T, Kersting, R
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We report on THz microscopy for sensing charge carrier distributions in semiconductors. The contactless technique gives insight into the Drude response of electrons with a bandwidth of about 2.5 THz. We have achieved a spatial resolution of about 1.8 mum, which corresponds to a sensitivity sufficient to detect as few as 5000 electrons.
ISSN:0094-243X
DOI:10.1063/1.2730447