High power ( > 10W from 100mum aperture) high reliability 808nm InAlGaAs broad area laser diodes

High power ( > 10W from 100mum aperture) high reliability 808nm InAlGaAs broad area laser diodes

Single stripe InAlGaAs laser diodes with non-absorbing mirrors (NAMs) operating at 808nm have been fabricated and tested. The inclusion of the NAM more than doubles the catastrophic optical damage power and greatly improves the reliability of the laser diode. A maximum CW power of over 10W has been...

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Veröffentlicht in:Electronics letters 2006-04, Vol.42 (9), p.535-536
Hauptverfasser: Lammert, R M, Osowski, M L, Oh, S W, Panja, C, Ungar, J E
Format: Artikel
Sprache:eng
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Zusammenfassung:Single stripe InAlGaAs laser diodes with non-absorbing mirrors (NAMs) operating at 808nm have been fabricated and tested. The inclusion of the NAM more than doubles the catastrophic optical damage power and greatly improves the reliability of the laser diode. A maximum CW power of over 10W has been achieved from an 808nm broad area laser with a 100mum stripe width.
ISSN:0013-5194
DOI:10.1049/el:20060636