FEM modeling of AlN/diamond surface acoustic waves device

This paper describes a general finite element method (FEM) for the AC steady state analysis of two-dimensional piezoelectric devices. The method is applied to a diamond based surface acoustic wave (SAW) layered structure. We determined the penetration depth of the elastic waves corresponding to a Al...

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Veröffentlicht in:	Diamond and related materials 2007-04, Vol.16 (4), p.987-990
Hauptverfasser:	Le Brizoual, L., Elmazria, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic wave devices, piezoelectric and piezoresistive devices AIN Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diamond Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology FEM Fullerenes and related materials diamonds, graphite Materials science Other semiconductors Physics SAW Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials
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Zusammenfassung:	This paper describes a general finite element method (FEM) for the AC steady state analysis of two-dimensional piezoelectric devices. The method is applied to a diamond based surface acoustic wave (SAW) layered structure. We determined the penetration depth of the elastic waves corresponding to a AlN layer of 5.2 μm thick and a spatial periodicity of 12 μm. The structure admittance response shows peaks corresponding to the modes 0, 1, 2 and 3. The penetration depth in diamond is around 24 μm.
ISSN:	0925-9635 1879-0062
DOI:	10.1016/j.diamond.2007.01.002