High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), p-MOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, such as the Non-local Empirical Pseudopotential method (bandstructure), Full-Band Monte-Carlo Simulations (transport), 1-D Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quantum effects) simulations, were used in this study.