MBE growth of GaN using 15N isotope for nuclear magnetic resonance applications

Nuclear magnetic resonance (NMR) is a powerful tool for chemical and structural analysis. We have grown zinc-blende GaN using high-purity 15N isotope gas by plasma-assisted molecular beam epitaxy and have studied the material using NMR measurements. We have detected, using NMR, optically pumped enha...

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Veröffentlicht in:	Journal of crystal growth 2007-04, Vol.301, p.417-419
Hauptverfasser:	Novikov, S.V., Morris, R.D., Kent, A.J., Geen, H.L., Foxon, C.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from vapor Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Other semiconductors Physics Specific materials Theory and models of film growth
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Beschreibung
Zusammenfassung:	Nuclear magnetic resonance (NMR) is a powerful tool for chemical and structural analysis. We have grown zinc-blende GaN using high-purity 15N isotope gas by plasma-assisted molecular beam epitaxy and have studied the material using NMR measurements. We have detected, using NMR, optically pumped enhancement of 15N nuclear polarization in zinc-blende Ga 15N. Initial NMR results of the optically pumped 15N polarization in Ga 15N are discussed.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.11.043