Molecular dynamics study on the dislocation loops in FCC metals

Dynamics of an interstitial and vacancy dislocation loops has been studied by the molecular dynamics method using EAM potential under shear stress conditions in FCC metals. An unfaulting process of changing from a faulted dislocation loop to a perfect dislocation under a shear stress is observed by visualizing the molecular dynamics results of Al, and its critical condition is determined for an interstitial and a vacancy dislocation loop with various sizes. The interaction of an edge dislocation and a dislocation loop is also studied to observe a formation of pinning structure. Various forms of pinning structures have been observed by changing the size of a dislocation loop in Cu and Al. The process of unfaulting of a dislocation loop is also observed during the interaction of an edge dislocation and an interstitial dislocation loop.