Experimental study of nucleation and quality of CVD diamond adopting two-step deposition approach using MPECVD

Effects of the deposition conditions on quality and nucleation density of CVD diamond were investigated using a microwave plasma enhanced chemical vapor deposition (MPECVD) method with methane-hydrogen gas mixtures. Diamond films were deposited at pressures of 665–4000 Pa, temperatures of 660–950 °C, and methane concentrations of 0.5–5 vol.%. Deposited diamond films were characterized by scanning electron microscopy, field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray diffraction. Diamond quality and nucleation density significantly affected by the deposition pressure, substrate temperature, and methane concentration. The findings of this work were discussed in terms of the effects of deposition conditions on the plasma composition. A two-step deposition approach was applied to improve nucleation density and quality of CVD diamond films. Polycrystalline diamond films were grown using the two-step deposition process changing a combination of parameters in the two steps. Growth and quality of the deposited diamond films were improved altering the deposition pressure and substrate temperature in the two steps.