Kondo-like behavior in ThAsSe and UAsSe
Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As–As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsS...
Gespeichert in:
Veröffentlicht in: | Journal of magnetism and magnetic materials 2007-03, Vol.310 (2), p.1778-1780 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As–As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsSe. We suggest that a coupling between neighboring As layers at the lowest temperatures may be at the origin of a second Kondo-like regime below ≈15
K. |
---|---|
ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2006.10.672 |