Kondo-like behavior in ThAsSe and UAsSe

Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As–As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsS...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2007-03, Vol.310 (2), p.1778-1780
Hauptverfasser: Schoenes, J., Withers, R.L., Hulliger, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As–As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsSe. We suggest that a coupling between neighboring As layers at the lowest temperatures may be at the origin of a second Kondo-like regime below ≈15 K.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2006.10.672