Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1mum were fabricated. The maximum transmittance of a 90 deg bend with radius of 2mum can be enhanced to almost 99% at a wavelength of 1.55mum, which corresponds to an attenuation factor...

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Veröffentlicht in:Electronics letters 2006-10, Vol.42 (22), p.1280-1281
Hauptverfasser: SCHULLER, Ch, HÖFLING, S, FORCHEL, A, ETRICH, C, ILIEW, R, LEDERER, F, PERTSCH, T, REITHMAIER, J. P
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
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Beschreibung
Zusammenfassung:Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1mum were fabricated. The maximum transmittance of a 90 deg bend with radius of 2mum can be enhanced to almost 99% at a wavelength of 1.55mum, which corresponds to an attenuation factor of 0.05dB per bend.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20062195