Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4×10 6 cm −2). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs...

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Veröffentlicht in:	Journal of crystal growth 2007-04, Vol.301, p.751-754
Hauptverfasser:	Huang, Shesong, Niu, Zhichuan, Ni, Haiqiao, Xiong, Yonghua, Zhan, Feng, Fang, Zhidan, Xia, Jianbai
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Long wavelength A1. Low density A3. Molecular beam epitaxy A3. Quantum dots Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Other semiconductors Physics Quantum dots Specific materials
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Beschreibung
Zusammenfassung:	By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4×10 6 cm −2). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.11.299