Fabrication of high-quality CdSe quantum dots for green laser diodes by molecular beam epitaxy

Fabrication of high quality CdSe quantum dots is described in this paper. The source material was CdSe compound and the amount of the source supply was fixed to 2.2 monolayers throughout the study. The orientation of GaAs substrates, the source supply rate and the growth interruption time were chang...

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Veröffentlicht in:	Journal of crystal growth 2007-04, Vol.301, p.755-758
Hauptverfasser:	Ohkuno, Koji, Oku, Hironao, Araki, Yuji, Nagata, Naohiro, Saraie, Junji
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Photoluminescence A3. MBE A3. Quantum dots B1. CdSe Cross-disciplinary physics: materials science rheology Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Optics Other topics in nanoscale materials and structures Physics Quantum dots Semiconductor lasers laser diodes
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Beschreibung
Zusammenfassung:	Fabrication of high quality CdSe quantum dots is described in this paper. The source material was CdSe compound and the amount of the source supply was fixed to 2.2 monolayers throughout the study. The orientation of GaAs substrates, the source supply rate and the growth interruption time were changed as growth parameters. Photoluminescence (PL) was measured at 14 K. The high PL intensity and the narrow line width were used as measures of high quality. Optimum growth conditions were established.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.11.103