Electronic Properties of GaN Films Grown on TiC Substrates

Crystalline GaN films were deposited on titanium carbide substrates by low-pressure organometallic vapour-phase epitaxy. Low background carrier concentration was verified by capacitance-voltage measurements. Low-temperature photoluminescence measurements indicated that the heteroepitaxial layer has...

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Veröffentlicht in:	Electrochemical and solid-state letters 2007-01, Vol.10 (2), p.H72-H73
Hauptverfasser:	Freitas, Jaime A., Rowland, Larry B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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