Electronic Properties of GaN Films Grown on TiC Substrates

Electronic Properties of GaN Films Grown on TiC Substrates

Crystalline GaN films were deposited on titanium carbide substrates by low-pressure organometallic vapour-phase epitaxy. Low background carrier concentration was verified by capacitance-voltage measurements. Low-temperature photoluminescence measurements indicated that the heteroepitaxial layer has...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electrochemical and solid-state letters 2007-01, Vol.10 (2), p.H72-H73
Hauptverfasser: Freitas, Jaime A., Rowland, Larry B.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Crystalline GaN films were deposited on titanium carbide substrates by low-pressure organometallic vapour-phase epitaxy. Low background carrier concentration was verified by capacitance-voltage measurements. Low-temperature photoluminescence measurements indicated that the heteroepitaxial layer has high crystalline quality, as verified by X-ray measurements, and is consistent with low background donor concentration near the film surface. 12 refs.
ISSN:1099-0062
DOI:10.1149/1.2402984