Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16Fe 62Si 8B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization ( M s: 800 emu/cm 3) than Co 90Fe 10 and a higher anisotropy constant ( K u: 2700 erg/cm 3) than Ni 80Fe 20. By increasing the...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2007-03, Vol.310 (2), p.1929-1931
Hauptverfasser:	Chun, B.S., Kim, Y.K., Hwang, J.Y., Yim, H.I., Rhee, J.R., Kim, T.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous magnetic material Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Magnetic properties and materials Magnetic tunnel junctions Physics Sensitivity Spin polarized transport Studies of specific magnetic materials Switching field Tunneling magnetoresistance
Online-Zugang:	Volltext
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Zusammenfassung:	Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16Fe 62Si 8B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization ( M s: 800 emu/cm 3) than Co 90Fe 10 and a higher anisotropy constant ( K u: 2700 erg/cm 3) than Ni 80Fe 20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field ( H sw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2006.10.762