Electrical properties of ZnO Nano-particles embedded in polyimide
The ZnO nano-particles were made in the polyimide dielectric matrix by using the chemical reaction between the zinc metal film and polyamic acid. The concentration of the ZnO particle is about 1.5 × 10^sup 12^ cm^sup -2^, with average size below 10 nm, and its shapes are almost spherical. Then, the...
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Veröffentlicht in: | Journal of electronic materials 2006-04, Vol.35 (4), p.512-515 |
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Sprache: | eng |
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Zusammenfassung: | The ZnO nano-particles were made in the polyimide dielectric matrix by using the chemical reaction between the zinc metal film and polyamic acid. The concentration of the ZnO particle is about 1.5 × 10^sup 12^ cm^sup -2^, with average size below 10 nm, and its shapes are almost spherical. Then, the polyimide layer is a stable dielectric material with a dielectric constant of 2.9. To investigate the electrical properties of ZnO particles in the polyimide insulator film, we fabricated a metal-insulator-semiconductor (MIS) structure and measured capacitance-voltage (C-V) with temperature modulation. At room temperature, C-V hysteresis with a voltage gap of 2.8 V appeared in the MIS structure using SiO^sub 2^/Si substrate. As the measuring temperature decreased, the C-V curves were shifted slightly to the accumulation region with gate bias. It was considered that the electrical charging may occur dominantly in nanoparticles, having only a few defects at the interface of the polyimide/SiO^sub 2^ and the polyimide/ZnO. [PUBLICATION ABSTRACT] |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-006-0091-3 |