10nm lines and spaces written in HSQ, using electron beam lithography

Hydrogen silsesquioxane (HSQ) is a high-resolution negative-tone inorganic resist with an established resolution below 10nm. Using 100keV electron beam lithography, we report the achievement of isolated 6nm wide lines in 20nm thick HSQ layers on silicon substrates. We also achieved 10nm lines and spaces in a 10nm HSQ layer. This is the smallest pitch (20nm) achieved to date using HSQ resist. Experiments in order to investigate the effect of KOH based developer on ultimate resolution have been also performed and resulted in 7nm wide lines. These results, in combination with the good etching resistance of HSQ, prove the versatility of HSQ for nanolithography.