Fine-tuning of GaAs photonic crystal cavities by digital etching
Optical cavities with quality factors above 2 × 10 5 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxid...
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| Veröffentlicht in: | Microelectronic engineering 2007-05, Vol.84 (5), p.1405-1407 |
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| container_end_page | 1407 |
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| container_issue | 5 |
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| container_title | Microelectronic engineering |
| container_volume | 84 |
| creator | Sünner, T. Herrmann, R. Löffler, A. Kamp, M. Forchel, A. |
| description | Optical cavities with quality factors above 2
×
10
5 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxide thickness was found. Combining surface oxidation over a defined time interval and subsequent oxide removal using a wet chemical treatment, tuning of the resonance wavelength in steps of less than 2
nm was achieved. |
| doi_str_mv | 10.1016/j.mee.2007.01.064 |
| format | Article |
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×
10
5 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxide thickness was found. Combining surface oxidation over a defined time interval and subsequent oxide removal using a wet chemical treatment, tuning of the resonance wavelength in steps of less than 2
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×
10
5 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxide thickness was found. Combining surface oxidation over a defined time interval and subsequent oxide removal using a wet chemical treatment, tuning of the resonance wavelength in steps of less than 2
nm was achieved.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Materials</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Photonic bandgap materials</subject><subject>Photonic crystal cavities</subject><subject>Physics</subject><subject>Post-fabrication technique</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kMFOwzAMhiMEEmPwANx6gVuL0zZNKi5MiA2kSVzgHKWuOzJ17UiySXt7Mg2JGyfL1vfb8sfYLYeMA68e1tmGKMsBZAY8g6o8YxOuZJEKUalzNomMTOuCy0t25f0aYl-CmrCnuR0oDbvBDqtk7JKFmflk-zWGcbCYoDv4YPoEzd4GSz5pDklrV_Y4o4BfMXTNLjrTe7r5rVP2OX_5eH5Nl--Lt-fZMsVCqJCikC1vmqYqhGkRkJdlSTnPm64qSAjKm6atiYRC4LJolFGGt7VCpVDmUKtiyu5Pe7du_N6RD3pjPVLfm4HGndd5rTiIEiLITyC60XtHnd46uzHuoDnooyu91tGVPrrSwHV0FTN3v8uNR9N3zgxo_V9QKZClEJF7PHEUP91bctqjpQGptY4w6Ha0_1z5ARo8fk0</recordid><startdate>20070501</startdate><enddate>20070501</enddate><creator>Sünner, T.</creator><creator>Herrmann, R.</creator><creator>Löffler, A.</creator><creator>Kamp, M.</creator><creator>Forchel, A.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070501</creationdate><title>Fine-tuning of GaAs photonic crystal cavities by digital etching</title><author>Sünner, T. ; Herrmann, R. ; Löffler, A. ; Kamp, M. ; Forchel, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-c57d1bbb635adc0c1444e212bf63e55e2bbd9ee58c0173b8a8a1d98c88c720983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Materials</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Photonic bandgap materials</topic><topic>Photonic crystal cavities</topic><topic>Physics</topic><topic>Post-fabrication technique</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sünner, T.</creatorcontrib><creatorcontrib>Herrmann, R.</creatorcontrib><creatorcontrib>Löffler, A.</creatorcontrib><creatorcontrib>Kamp, M.</creatorcontrib><creatorcontrib>Forchel, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sünner, T.</au><au>Herrmann, R.</au><au>Löffler, A.</au><au>Kamp, M.</au><au>Forchel, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fine-tuning of GaAs photonic crystal cavities by digital etching</atitle><jtitle>Microelectronic engineering</jtitle><date>2007-05-01</date><risdate>2007</risdate><volume>84</volume><issue>5</issue><spage>1405</spage><epage>1407</epage><pages>1405-1407</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Optical cavities with quality factors above 2
×
10
5 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxide thickness was found. Combining surface oxidation over a defined time interval and subsequent oxide removal using a wet chemical treatment, tuning of the resonance wavelength in steps of less than 2
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| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2007-05, Vol.84 (5), p.1405-1407 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Compound structure devices Electronics Etching Exact sciences and technology Fundamental areas of phenomenology (including applications) Materials Optical materials Optics Photonic bandgap materials Photonic crystal cavities Physics Post-fabrication technique Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Fine-tuning of GaAs photonic crystal cavities by digital etching |
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