Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3mum

Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from 1.3 to 2.05mum has already been achieved [G. Boehm, M. Ortsiefer R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Kohler, F. Mederer, R. Meyer, M.-C. Amann, in: Proceedings of MBE XII, J. Crystal Growth (2002) pp. 748-753]. Within this range, absorption lines of gases like H2S (1590nm), CH4 (1654nm), H2O (1877nm) and CO2 (2004nm) are detectable [G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M.-C. Amann, F. Winter, Meas. Sci. Technol. 14 (2003) 472]. The aim of this work is a further expansion of the emission wavelength up to 2.3mum, exploiting the well-known InP-based material system and the fabrication technique of buried tunnel junction (BTJ) VCSELs [R. Shau, M. Ortsiefer, J. Rosskopf, G. Boehm, C. Lauer, M. Maute, M.-C. Amann, in: Proceedings of SPIE, 5364 (2004) 1-15] to reach the technologically important absorption lines of carbon monoxide (CO) around 2.33mum.