Excitons in type-I type-II strained Si/Si1-xGex graded quantum well

The exciton properties of Si/Si1–xGex strained quantum wells (QW's) are calculated taking into account interface and strain effects. Our numerical results allow us to conclude that interface fluctuations of only 10 Å in a type‐I (type‐II) strained Si/Si0.8Ge0.2(Si/Si0.7Ge0.3) 50 Å QW leads to a...

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Veröffentlicht in:	Physica status solidi. C 2005-05, Vol.2 (8), p.2958-2961
Hauptverfasser:	Costa e Silva, J., Freire, J. A. K., Freire, V. N., Farias, G. A., da Silva Jr, E. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.35.-y 73.21.Fg 78.66.Hf
Online-Zugang:	Volltext
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Zusammenfassung:	The exciton properties of Si/Si1–xGex strained quantum wells (QW's) are calculated taking into account interface and strain effects. Our numerical results allow us to conclude that interface fluctuations of only 10 Å in a type‐I (type‐II) strained Si/Si0.8Ge0.2(Si/Si0.7Ge0.3) 50 Å QW leads to a 25 meV (10 meV) blueshift of the exciton energy. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200460729