Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

II–VI compound materials containing beryllium‐chalcogenides such as BeZnTe, ZnCdSe/BeZnTe, and MgSe/BeZnTe superlattices grown on InP substrates have been investigated for yellow‐green emitters employing molecular beam epitaxy. Photoluminescence peaks of ZnCdSe/BeZnTe superlattices were widely controlled from 740 to 507 nm by changing the layer thickness combination. Applying ZnCdSe/BeZnTe and MgSe/BeZnTe superlattices, visible light emitting diodes (LEDs) were fabricated emitting at the wavelengths from 554 (yellow‐green) to 644 nm (red) at room temperature. For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated. Laser diodes consisting of a ZnCdSe active, a MgSe/ZnCdSe superlattice n‐cladding, and a MgSe/BeZnTe superlattice p‐cladding layers successfully operated with yellow‐green lasing emissions around 560 nm at 77 K. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)