Light-induced anelastic change in a-Si(H)

The thermal desorption spectra between 400 and 1100 K and the internal friction spectra between 80 and 423 K were studied for a-Si(H). The thermal desorption of hydrogen was observed around 650 K (TDH 650 K ) and around 900 K (TDH 900 K,L and TDH 900 K,H ). Both TDH 900 K,L and TDH 900 K,H with the activation energy of 1.6 eV were attributed to the desorption of bonded hydrogen. TDH 650 K was not a diffusion controlled process with the activation energy of 1.0 eV, where one part of TDH 650 K was attributed to the desorption of isolated hydrogen molecules. The hydrogen-induced internal friction, H- Q a-Si ( H ) − 1 , was observed between 80 and 423 K. Hydrogen responsible for H- Q a-Si ( H ) − 1 showed the thermal desorption around 650 K (TDH 650 K ), indicating that isolated hydrogen molecules in the amorphous structure may be responsible for H- Q a-Si ( H ) − 1 . Light soaking caused changes in H- Q a-Si ( H ) − 1 in the temperature ranges between 80 and 200 K and between 200 and 300 K, indicating that light soaking modified the local amorphous structures responsible for these changes in Q a-Si ( H ) − 1 .